【学术视频】ICFSI-17 | 牛津大学陈宇林教授

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图 | 陈宇林

题   目：Electronic structures & unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor

报告人：陈宇林

单   位：University of Oxford

时   间：2019-06-25

地   点：上海交通大学

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报告摘要

Semiconductors are essential materials thataffect our everyday life in the modern world. Two-dimensional semiconductors with high mobility and moderate bandgap are particularly attractive today because of their potential application in fast, low-power, and ultrasmall/thin electronic devices. We investigate the electronic structures of a new layeredair-stable oxide semiconductor, Bi₂O₂Se, with ultrahigh mobility (~2.8 × 10⁵cm²/V⋅s at 2.0 K) and moderate bandgap (~0.8 eV). Combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy, we mapped out the complete band structures of Bi₂O₂Se with key parameters (for example, effective mass, Fermi velocity, and bandgap). The unusual spatial uniformity of the bandgap without undesired in-gap states on the sample surface with up to ~50% defects makes Bi₂O₂Se an ideal semiconductor for futur electronic applications. In addition, the structural compatibility between Bi₂O₂Se and interesting perovskite oxides (for example, cuprate high–transition temperature superconductors and commonly used substrate material SrTiO₃) further makes heterostructures between Bi₂O₂Se and these oxides possible platforms for realizing novel physical phenomena, such as topological superconductivity, Josephson junction field-effect transistor, new superconducting optoelectronics, and novel lasers.

个人简介

陈宇林，2000年获中国科学技术大学物理学学士学位，2008年获斯坦福大学物理学博士学位。历任牛津大学物理系副教授、牛津大学耶稣学院Fellow，2014年起任清华大学物理系教授，2015年起任上海科技大学物质学院凝聚态物理与光子科学研究部主任、特聘教授。课题组主要利用角分辨光电子能谱研究新型材料（拓扑量子材料、非常规超导体、低维量子材料等）的电子结构探索工作。近年发表论文90余篇，被引次数超过12000次。曾荣获Outstanding Young Researcher Award (Macronix Prize)、William E. and Diane M. Spicer Young Investigator Award等奖项。

会议简介

The 17th International Conference on the Formation of Semiconductor Interfaces (ICFSI-17) was held in Shanghai. This 17th conference of the ICFSI series, started in 1985 by G. Le Lay, has the intention, as all previous meetings, to give a broadband overview over the latest developments of modern phenomena at surfaces, interfaces, and nanostructures based on semiconductors or insulators ranging from the characterization at the atomic scale to prospects of electronic, spintronic, photonic and photovoltaic applications. The aim for this conference is to bring together leading experts from various fields and disciplines in order to stimulate the exchange of knowledge and promote the capabilities of this interdisciplinary research topic.

Organizer: Shanghai Jiaotong University, Kavli Institute for Theoretical Sciences, Chinese Academy of Sciences

—— ——往期精彩回顾—— ——●【学术视频】ICFSI-17 | 耶拿大学Friedhelm Bechstedt: Validity of Anderson rule for interfaces between 2D semiconductors●【学术视频】ICFSI-17 | Jun Nakamura of UEC: Bi-layer formation of water on graphene●【学术视频】ICFSI-17 | 复旦大学张远波教授：Magnetic-field-induced Quantized Anomalous Hall Effect in Intrinsic Magnetic Topological Insulator MnBi₂Te₄●【学术视频】ICFSI-17 | Thierry ANGOT of Aix-Marseille University: Epitaxial graphene and silicene●【学术视频】ICFSI-17 | 中国科大张振宇教授：Atomistic Growth Mechanisms & Property Optimization of 2D Materials

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